Polish company AMMONO S. A., a worldwide leader in manufacturing of very low dislocation ammonothermal bulk gallium nitride wafers, has won a public bid for the supply of gallium nitride wafers.
News about Ammono
Under PolHEMT project an AlGaN/GaN HEMT on bulk Ammono GaN substrate with saturated drain current as high as 1A/mm is characterized and used to design S-band power amplifier
Followed by the last year achievement of High Electron Mobility Transistor on highly resistive Ammono-GaN substrate, the PolHEMT project was accomplished by successful development of HEMT transistors characterized by their operating frequency exceeding 20 GHz
Ammono was invited to give a talk at an XVIII International Conference on Crystal Growth and Epitaxy (ICCGE), held in 7-12th of August in Nagoya, Japan. This is the largest event gathering the crystal growth community from all over the world