News about Ammono

Under PolHEMT project an AlGaN/GaN HEMT on bulk Ammono GaN substrate with saturated drain current as high as 1A/mm is characterized and used to design S-band power amplifier

Followed by the last year achievement of High Electron Mobility Transistor on highly resistive Ammono-GaN substrate, the PolHEMT project was accomplished by successful development of HEMT transistors characterized by their operating frequency exceeding 20 GHz

Ammono was invited to give a talk at an XVIII International Conference on Crystal Growth and Epitaxy (ICCGE), held in 7-12th of August in Nagoya, Japan. This is the largest event gathering the crystal growth community from all over the world

Ammono was invited to give a talk at the Advanced Power Semiconductors Workshop organized by the Japanese Association of Applied Physics in Kobe prefecture, Japan (21st of July 2016). Ammono was the only attendee outside Japan