Under PolHEMT project an AlGaN/GaN HEMT on bulk Ammono GaN substrate with saturated drain current as high as 1A/mm is characterized and used to design S-band power amplifier. The amplifier achieves the parameters as follows: output power at 1dB gain compression point is more than 30 dBm and 13.5 dB gain over the 2.5-3.5 GHz frequency range, maximal power density of 4,15W/mm. The main limitation of the power is current drop caused by high temperature of the transistor. Relatively high thermal resistance can be lowered mostly by decreasing the chip thickness (currently 0.4 mm). Additionally, formation of metal via holes from source pads to ground can improve the heat dissipation, gain and reduce on-resistance Ron.

The results were presented at the 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), 9-11th of May and published under 10.1109/MIKON.2016.7492073

The PolHEMT project is carried out by members of Polish consortium ATU-PLUS, consisting of AMMONO SA, Institute of Electron Technology, Institute of High Pressure Physics, Institute of Physics, Polish Academy of Science, TopGaN Sp. z o. o., under the Applied Research Program of National Center of Research and Development contract number: PBS1/A3/9/2012.

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