Ammono was invited to give a talk at the Advanced Power Semiconductors Workshop organized by the Japanese Association of Applied Physics in Kobe prefecture, Japan (21st of July 2016). Ammono was the only attendee outside Japan. The latest achievements on ammonothermal synthesis of GaN substrates among contributions of various substrates manufacturers (Si, SiC, diamond, Ga2O3) for the purpose of power electronics. Were presented. We presented improvements on all types of ammonothermal substrates (n-type, p-type, semi-insulating) from the point of view of electronic devices, designed both in horizontal (HEMT transistors) and vertical architecture. The latter one is a response of the company to the growing demand on vertical transistor in high voltage electronic devices and switches in the Japanese and world market.