As GaN based technologies get more mature Ammono’s customers instead of developing devices themselves from scratch start to have also interest in epitaxial structures on bulk AMMONO-GaN. This saves time necessary to optimize epitaxial technology on Ammono’s innovative substrates. In order to better fit customer expectation Ammono started to cooperate with epi-partners who provide epi-structures on AMMONO-GaN. Different classes of products are possible:
- high quality epi-ready homoepitaxial GaN templates on GaN (n-type, p-type, semi-insulating GaN),
- complete epitaxial structures of high brightness light emitting diodes (HB LEDs), lasers and high electron mobility transistors (HEMT),
- all combinations of InAlGaN structures and devices on bulk GaN.