News about Ammono

AMMONO at the International Workshop on Nitride Semiconductors IWN2012 in Sapporo, Japan

AMMONO’s President and CEO Dr. Robert Dwilinski, will be giving an invited talk at the 4th International Symposium on Growth of III-Nitrides in St. Petersburg, Russia. 16th- 19th July 2012.

This year, this one of the most prestigious events addressing the growth of nitride crystals is organized by the Ioffe Physical-Technical Institute of the Russian Academy of Sciences. It is a fourth symposium in a biannual series focusing specifically on growth of III-Nitride materials, nanostructures and device structures. Session 3 of this event  is dedicated to growth of bulk crystals and templates. AMMONO’s President and CEO Dr. Robert Dwilinski will  be giving on July 16th (Monday) at 2.15 pm, an invited talk entitled: "Growth of bulk GaN by ammonothermal technique". Do not miss this  unique opportunity to get the comprehensive information on ammonothermal bulk GaN growth method just directly from  one of its inventors and AMMONO’s founders. For more details please check www.ioffe.ru

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Since 1984, OPTO Taiwan which is a part of the Photonics Festival 2012 has been the annual event for the photonics industry. The exhibition is the main optoelectronic and photonic meeting point in Asia. Ammono as a substrate maker is at the very beginning of the value chain for those markets and will be exhibiting this year its latest products. Our combined technical/sales team supported by Ammono’s Taiwanese distributor Litrax will exhibit and provide technical and commercial information both in English and in Chinese. Meet us in Taipei at OPTO TAIWAN , June 19-21, 2012 at the TWTC Nangang Exhibition Hall, both # L1102.

For fixing meetings during the event  please contact us at This email address is being protected from spambots. You need JavaScript enabled to view it.

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As GaN based technologies get more mature Ammono’s customers instead of developing devices themselves from scratch start to have also interest in epitaxial structures on bulk AMMONO-GaN. This saves time necessary to optimize epitaxial technology on Ammono’s innovative substrates. In order to better fit customer expectation Ammono started to cooperate with epi-partners who provide epi-structures on AMMONO-GaN. Different classes of products are possible:

  • high quality epi-ready homoepitaxial GaN templates on GaN (n-type, p-type, semi-insulating GaN),
  • complete epitaxial structures of high brightness light emitting diodes (HB LEDs), lasers and high electron mobility transistors (HEMT),
  • all combinations of InAlGaN structures and devices on bulk GaN.

For details please contact Ammono sales department This email address is being protected from spambots. You need JavaScript enabled to view it.