News about Ammono

Ammono S.A. the world leader in the production of ammonothermal gallium nitride (GaN) is pleased to announce the introduction of a new class of HIGH TRANSPARENCY  n-type substrates.

Ammono had an invited presentation during the 9th International Conference on Nitride Semiconductors (www.icns9.org). The presentation was given by our CTO Dr. Roman Doradziński and focused on the latest progress in the Ammonothermal growth of Gallium Nitride and the results of devices made on our substrates

InGaN laser diode (LD) mini-arrays with unprecedented power levels have been grown by the TopGaN company on the basis of Ammono GaN substrates. Polish Academy of Science, Institute of High Pressure Physics Unipress participated also in the project.

The very latest progress in Ammono’s crystal growth technology was presented during an invited talk at the IWCGT5 in Berlin, Germany.