AMMONO is the world leader in truly bulk Gallium Nitride (GaN) manufacturing.
Technology development started in 1992 and led to the creation of best in class products characterized by a perfect crystalline quality.
Technological breakthroughs in ammonothermal technology result today in the production of up to 2-inch diameter high quality bulk C-plane GaN substrates as well as non-polar M-plane, A-plane and semi-polar GaN wafers. Those products are in the focus of Light Emitting Diodes, optoelectronics devices such as green and blue lasers and High Electron Mobility Transistors.
The Ammono-GaN substrates are strain free, their crystal lattice is extremely flat and their dislocation density is two orders of magnitude lower than for those produced using other technologies. The perfect quality of Ammono-GaN is also emphasized by very high electrical carrier concentration. Leading to a substantial reduction of energy consumption innovative AMMONO products are seen as enablers for breakthroughs in high-power electronic and solid state lighting.
AMMONO GaN Data sheets:
- High-carrier-concentration n-type Ammono-GaN substrates
- High Transparency n-type Ammono-GaN substrates
- Ultra High Resistivity Semi-Insulating Ammono-GaN substrates