AMMONO (leased and led by the Institute of High Pressure Physics of the Polish Academy of Sciences) offers gallium nitride wafers of the highest quality in the world. They are prepared from bulk GaN crystallized with ammonothermal method.

In order to meet the requirements of the nitride community, AMMONO is now able to prepare wafers with a large offcut angle (large misorientation). It can reach up to 2 deg. for 1-inch and 1.5-inch GaN. Substrates with such specifications are often required for optoelectronic devices. The significant advantage of AMMONO-GaN wafers is their uniformity in terms of the offcut angle. This is specifically important for controlling the composition of epitaxial layers deposited on the substrates. The large offcut angle is offered for n-type GaN, unintentionally doped with oxygen, with a high free carrier concentration of around 1x1019 cm-3. The wafers are of high structural quality typical for AMMONO-GaN: threading dislocation density at the level of 5x104 cm-2 and extremely flat crystallographic planes (radius of curvature above 20 m and FWHM values of X-ray rocking curves of about 20 arcsec for slit size slit 100 μm × 100 μm). 

The new products offered by AMMMONO can improve the performance of nitride-based LEDs and laser diodes as well as might open the path to some new applications.

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