News about Ammono

We have the pleasure to announce that our colleague from Institute of High Pressure Physics (IHPP), also known as "Unipress"-Tomek Sochacki has been invited to deliver a scene setter talk during International Workshop on Bulk Nitride Semiconductors (IWBNS-10). The title of his talk is ‘Status, perspectives, and trends in HVPE growth of bulk gallium nitride’.

Additionally, Unipress will be represented at IWBNS-10 by IHPP Director Professor Izabella Grzegory, as well as Mikolaj Amilusik and Michal Fijalkowski. The titles of their invited talks, respectively, are: ‘GaN synthesis in metallic systems used for crystal growth of diamond’, ‘Highly resistive HVPE-GaN grown on native seeds’, and ‘Comparison of structural, optical, and electrical properties of highly conductive HVPE-GaN doped with Si or Ge and grown on native seeds’.

During IWBNS-10 Marcin Zajac, PhD from AMMONO Lab will present an invited lecture titled ‘GaN crystals grown by basic ammonothermal method - state of the art, perspectives and challenges’. It will be also a scene setter presentation.

The Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) is currently the leaseholder  of the Ammono Company, which manufactures gallium nitride (GaN) wafers with the ammonothermal method. The lease has been conducted in the best interest of nitride semiconductor science and technology.

The Ammono Company has been in receivership since 2015. The tenancy, founded by the Polish Ministry of Science and Higher Education, will enable a close cooperation between the groups involved in ammonothermal and Hydride Vapor Phase Epitaxy (HVPE) crystallization of GaN. The latter is performed at IHPP PAS and as a result of common projects a possible synergy of these two methods has been revealed. Ammono owns a pilot line of ammonothermal GaN wafers and IHPP PAS is building a pilot line for HVPE GaN substrates.

The lease and collaboration will lead to further development of both methods and, in the future, to merging of the two technologies and mass production of high-quality GaN wafers required for electronic and optoelectronic devices based on GaN. The tenancy will also enable knowledge transfer among researchers involved in GaN crystallization for more than two decades.

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Ammono, the manufacturer of  high-quality GaN substrates by ammonothermal method is pleased to announce, that researches from School of Electrical and Computer Engineering, Department of Materials Science and Engineering, Cornell University (USA) realized N-polar GaN p-n diodes on monocrystalline Ammono-GaN substrates using plasma-assisted Molecular Beam Epitaxy (PA-MBE) technique.

AMMONO had the honour to host Professor Shuji Nakamura, Nobel Laureate in Physics for the invention of blue LEDs based on III-nitride materials and a Doctor Honoris Causa of the University of Warsaw in our company today.