News about Ammono

One square inch non-polar and semi-polar AMMONO-GaN substrates demonstrated

AMMONO at the European Space Agency conference in Noordwijk, the Netherlands

AMMONO at the International Workshop on Nitride Semiconductors IWN2012 in Sapporo, Japan

AMMONO’s President and CEO Dr. Robert Dwilinski, will be giving an invited talk at the 4th International Symposium on Growth of III-Nitrides in St. Petersburg, Russia. 16th- 19th July 2012.

This year, this one of the most prestigious events addressing the growth of nitride crystals is organized by the Ioffe Physical-Technical Institute of the Russian Academy of Sciences. It is a fourth symposium in a biannual series focusing specifically on growth of III-Nitride materials, nanostructures and device structures. Session 3 of this event  is dedicated to growth of bulk crystals and templates. AMMONO’s President and CEO Dr. Robert Dwilinski will  be giving on July 16th (Monday) at 2.15 pm, an invited talk entitled: "Growth of bulk GaN by ammonothermal technique". Do not miss this  unique opportunity to get the comprehensive information on ammonothermal bulk GaN growth method just directly from  one of its inventors and AMMONO’s founders. For more details please check www.ioffe.ru

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