Research & development is one of the most important activities in mankind history.

Nowadays this kind of activity has own name and established position all over the world. But it presents only our inclination to make our lives easier, more save or just to satisfy our curiosity of outward things and the whole Universe. Very common things at present have been very innovative in the past. It is required years of hard work, passion together with non standard point of view or just luck.

Our company has all necessary attributes and knowledge, therefore our main field from the beginning is research and development on new materials for electronics. Our main R&D directions are semi-conductor materials and we are specializing in high quality gallium nitride (GaN). We established our own ammonothermal method of growing GaN crystals to produce GaN wafers to be used as substrates for research and production of blue and green laser diodes (LDs), detectors and high electron mobility transistors (HEMTs).

The Ammonothermal method for obtaining mono-crystalline GaN is analogous to the well known industrial hydrothermal method of quartz (SiO2) production which results in production of tens of tons of synthetic quartz per year.

The Ammonothermal method was invented by the founders of Ammono and developed by them as a means of producing high quality GaN substrates. The method, materials and wide range of devices are protected by 20 patent applications. The three main advantages of our method are low costs, very well controlled growth on seeds, which leads to high quality and scalability.

The Ammonothermal method itself provides outstanding quality seeds. Such seeds are the basis of further crystal production. Nevertheless we are receptive for all kind of cooperation with reliable partners for the common benefits. Another word our company spares no efforts to make our lives easier.

We were present as invited speakers at following events:

Some of our research result have been published in relevant journals:

[1] R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Excellent crystallinity of truly bulk ammonothermal GaN, Journal of Crystal Growth 310 (2008), pp. 3911.

[2] R. Kudrawiec, J. Misiewicz, M. Rudziński, M. Zając, Contactless electroreflectance of GaN bulk crystals grown by ammonothermal metod and GaN epilayers grown on these crystals, Applied Physics Letters, 93 (2008), pp. 061910.

[3] R. Dwiliński, M. Zając, Y. Kanbara, Excellent crystallinity of truly bulk ammonothermal GaN, SPring-8 Research Frontiers 2008, pp. 146.

[4] R. Dwiliński, R. Doradziński, J. Garczyński, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Bulk ammonothermal GaN, Journal of Crystal Growth 311 (2009), pp. 3015-3018.

More Articles

[5] R. Kudrawiec, J. Misiewicz, M. Rudziński, M. Zając, Contactless electroreflectance of GaN bulk crystals grown by ammonothermal metod and GaN epilayers grown on these crystals, Applied Physics Letters, 93 (2008), pp. 061910.

[6] R. Kudrawiec, M. Rudziński, J. Serafińczuk, M. Zając, J. Misiewicz, Photoreflectance study of exciton energies and linewidths for homoepitaxial and heteroepitaxial GaN layers, Journal of Applied Physics 105 (2009), pp. 093541.

[7] R. Kucharski, M. Rudziński, M. Zając, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kudrawiec, J. Serafińczuk, W. Strupiński, R. Dwiliński, Non-polar GaN substrates grown by ammonothermal metod, Applied Physics Letters 95 (2009), pp. 131119.

[8] R. Dwiliński, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kucharski, M. Rudziński, M. Zając, R. Kudrawiec, Properties of truly bulk GaN monocrystals grown by ammonothermal metod, physica status solidi c 6 (2009) pp. 2661.

[9] R. Dwiliński, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kucharski, M. Zając, Ammonothermal growth of GaN substrates, Proc. SPIE, 7602, 7602C; doi:10.1117/12.84539 (2010).

[10] R. Dwiliński, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kucharski, M. Zając, M. Rudziński, R. Kudrawiec, J. Serafińczuk, W. Strupiński, Recent achievements in AMMONO-bulk method, J. Crystal Growth 312 (2010) pp. 2499-2502.

[11] R. Kudrawiec, M. Rudziński, R. Kucharski, M. Zając, R. Doradziński, L. P. Sierzputowski, J. Garczyński, J. Serafińczuk, W. Strupiński, J. Misiewicz, R. Dwiliński, Optical and structural properties of m-plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates, physica status solidi c 7 (2010), 2359-2364.

[12] R. Dwiliński, R. Doradziński, J. Garczyński, L.P. Sierzputowski, Y. Kanbara, in Technology of Gallium Nitride Crystal Growth, Chapter 7, p. 137, edited by Springer (2010).

[13] R. Dwiliński, R. Doradziński, M. Zając, Bulk GaN: Ammonothermal trumps HVPE, Compound Semiconductor Magazine, p. 12, March 2010.

[14] R. Stevenson, The World’s Best Gallium Nitride, IEEE Spectrum, July 2010.

[15] R. Kucharski, M. Zając, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kudrawiec, J. Serafińczuk, J. Misiewicz, R. Dwiliński, Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method, Applied Physics Express 3 (2010), pp. 101001.